In-situ ellipsometric studies on epitaxially grown silicon by hot-wire CVD

Solid State Communications

Volumn 116, Issue 11, 2000, Pages 625-629

  Seitz, H ^a   Schroder B ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MICROSTRUCTURE; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

SEMICONDUCTING SILICON;

EID: 0343878204     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00391-4     Document Type: Article

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