Reactive ion etching induced surface damage of silicon carbide

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 765-768

  Xia, J H ^a   Rusli, ^a   Gopalakrishan, R ^b   Choy, S F ^b   Tin, C C ^c   Ahn, J ^a   Yoon, S F ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c AUBURN UNIVERSITY   (United States)

Author keywords

4H SiC; Micromasking effect; Reactive ion etching; Residue; Surface damage; Surface roughness

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DAMAGE DETECTION; MASKS; REACTIVE ION ETCHING; SURFACE ROUGHNESS;

CARBON-RICH LAYERS; MICROMASKING EFFECTS; SURFACE DAMAGE; TEXTURED ETCHED SURFACES;

SILICON CARBIDE;

EID: 30344477569     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.765     Document Type: Conference Paper

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