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Volumn , Issue , 1996, Pages 665-668
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EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3 - 1.55 µm WAVELENGTH RANGE
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Author keywords
[No Author keywords available]
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Indexed keywords
EFFICIENCY;
LEAKAGE CURRENTS;
OPTICAL FIBER COMMUNICATION;
PHOTODETECTORS;
PHOTONS;
SINGLE MODE FIBERS;
WAVEGUIDES;
CURRENT DENSITY;
EPITAXIAL GROWTH;
OPTICAL COMMUNICATION;
OPTICAL FIBERS;
OPTICAL INTERCONNECTS;
OPTICAL WAVEGUIDES;
PHOTODIODES;
QUANTUM EFFICIENCY;
SEMICONDUCTING SILICON COMPOUNDS;
ABSORPTION LAYER;
ACTIVE-ABSORPTION;
EXTERNAL EFFICIENCY;
EXTERNAL QUANTUM EFFICIENCY;
GE-CONTENT;
PIN PHOTODIODE;
SI SUBSTRATES;
SI-BASED PHOTODETECTORS;
SIGEC ALLOY;
SINGLE-MODE FIBERS;
GERMANIUM ALLOYS;
PHOTODETECTORS;
ACTIVE ABSORPTION LAYER;
PSEUDOMORPHIC ALLOY;
WAVELENGTH RANGE;
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EID: 0030422223
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/68.553101 Document Type: Conference Paper |
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Times cited : (8)
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References (12)
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