Ab initio study of ZnO- and GaN-based diluted magnetic semiconductors and its magnetic properties

Journal of Crystal Growth

Volumn 287, Issue 1, 2006, Pages 74-77

  Kang, B S ^a   Kim, W C ^a   Shong, Y Y ^a   Kang, H J ^a  

^a Chungbuk National University   (South Korea)

Author keywords

A1. Defects; A1. Magnetism; B1. ZnO; B3. Diluted magnetic semiconductors

Indexed keywords

ANTIFERROMAGNETISM; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GALLIUM NITRIDE; MAGNETIC PROPERTIES; ZINC OXIDE;

DILUTED MAGNETIC SEMICONDUCTORS; DOPANTS; ORBITAL METHOD; ZNO;

MAGNETIC SEMICONDUCTORS;

EID: 29944432972     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.046     Document Type: Article

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