Structure and energy of the 90° partial dislocations in wurtzite-GaN

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 1057-1060

  Savini, G ^a,b   Heggie, M I ^b   Ewels, C P ^b   Martsinovich, N ^b   Jones, R ^c   Blumenau, A T ^c,d  

^a CNR   (Italy)

^b UNIVERSITY OF SUSSEX   (United Kingdom)

^c UNIVERSITY OF EXETER   (United Kingdom)

^d MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

Charge; Deep levels; Dislocations; GaN; Yellow luminescence

Indexed keywords

BAND STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC FIELDS; LUMINESCENCE;

CHARGE POLARIZATION; DEEP LEVELS; DISLOCATION CORES;

GALLIUM NITRIDE;

EID: 29844443683     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.1057     Document Type: Conference Paper

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