An upper limit of concentration for erbium photoluminescence from silica-based thin films formed by MEVVA implantation

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 327, Issue 4, 2004, Pages 332-336

  Xiao, Zhisong ^a   Xu, Fei ^b   Cheng, Guoan ^a   Zhang, Tonghe ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

61.72.Tt; 7.55. m; 76.30.Kg; Erbium; Ion implantation; Photoluminescence; Silica

Indexed keywords

ERBIUM; ERBIUM COMPOUNDS; ION IMPLANTATION; ION SOURCES; NANOCRYSTALLINE SILICON; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICA; VACUUM APPLICATIONS;

61.72.TT; 7.55.-M; 76.30.KG; LUMINESCENCE PEAK; METAL VAPOR VACUUM ARCS; NANOCRYSTALLINE SI; PHOTOGENERATED CARRIERS; PHOTOLUMINESCENCE PROPERTIES;

THIN FILMS;

ERBIUM; ION; METAL; SILICON DIOXIDE;

ARTICLE; CONCENTRATION (PARAMETERS); ENERGY TRANSFER; FILM; IMPLANTATION; PHOTOLUMINESCENCE; ROOM TEMPERATURE; VACUUM; VAPOR;

EID: 2942755699     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2004.05.002     Document Type: Article

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