Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 173, Issue 4, 2001, Pages 427-435

  Zhang, Yanwen ^a,b   Zhang, Tonghe ^a   Xiao, Zhisong ^a   Whitlow, Harry J ^c  

^a Inst Low Ener Nucl Phys B   (China)

^b UPPSALA UNIVERSITY   (Sweden)

^c LUND INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; ERBIUM; ION IMPLANTATION; NICKEL; SCANNING ELECTRON MICROSCOPY; SPUTTERING; VACUUM APPLICATIONS; VANADIUM;

METAL VAPOR VACUUM ARC (MEVVA) SOURCE; SILICIDE; TIME OF FLIGHT ENERGY ELASTIC RECOIL DETECTION ANALYSIS;

SILICON;

EID: 0035252278     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00430-4     Document Type: Article

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