MBE growth of reliable high-power lasers with InGaAsP quantum well

Journal of Crystal Growth

Volumn 268, Issue 1-2, 2004, Pages 8-11

  Kuang, G K ^a   Hernandez, I C ^a   McElhinney, M ^a   Zeng, L ^a   Caliva, B ^a   Walker, R ^a  

^a Lasertel Inc   (United States)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting quaternary alloys; B3. Laser diodes

Indexed keywords

CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC LOSSES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); LARGE OPTICAL CAVITY (LOC) LASERS; POWER DEGRADATION; SEMICONDUCTING QUATERNARY ALLOYS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 2942737375     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.030     Document Type: Article

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