795 nm-emitting 40 W CW high-temperature laser diode bars with Al-free active area

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1998, Pages 276-277

  Bournes, P ^a   Asonen, H ^a   Fang, F ^a   Finander, M ^a   Jansen, M ^a   Nabiev, R F ^a   Nappi, J ^a   Rakkenus, K ^a   Salokatve, A ^a  

^a Semiconductor Group   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH POWER LASERS; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN;

DIODE LASER BARS; TENSILE STRAIN;

QUANTUM WELL LASERS;

EID: 0032288385     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)