Characterization and control of defect states of polycrystalline silicon thin film transistor fabricated by laser crystallization

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 2, 2002, Pages 1321-1325

  Watakabe, H ^a   Tsunoda, Y ^a   Andoh, N ^a   Sameshima, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRIC FIELDS; FERMI LEVEL; HEAT TREATMENT; LASERS; NUMERICAL ANALYSIS; POLYSILICON; SOLAR CELLS; THRESHOLD VOLTAGE;

LASER CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 18344404456     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01154-1     Document Type: Article

References (9)