Semiconductor-metal phase transition of iron disilicide by laser annealing and its application to form device electrodes

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 223-226

  Otogawa, Naotaka ^a   Wang, Shinan ^a   Kihara, Shusaku ^b   Liu, Zhengxin ^a,c   Fukuzawa, Yasuhiro ^a   Suzuki, Yasuhito ^a,c   Osamura, Masato ^a,c   Ootsuka, Teruhisa ^a,c   Mise, Takahiro ^a,c   Miyake, Kiyoshi ^b   Nakayama, Yasuhiko ^a   Tanoue, Hisao ^a   Makita, Yunosuke ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c System Engineers' Co Ltd   (Japan)

Author keywords

Fe2Si5; FeSi2; Electrode; Laser annealing; Phase transition

Indexed keywords

ANNEALING; ELECTRODES; EPITAXIAL GROWTH; IRON COMPOUNDS; OHMIC CONTACTS; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; SEMICONDUCTOR LASERS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

Α-FE2SI5; Β-FESI2; LASER ANNEALING; REACTIVE DEPOSITION EPITAXY (RDE);

SEMICONDUCTING FILMS;

EID: 2942685470     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.081     Document Type: Conference Paper

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