Determination of optimal insulator thickness for MISiC hydrogen sensors

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1673-1677

  Xu, J P ^a   Lai, P T ^b   Han, B ^a   Tang, W M ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Hydrogen sensor; Metal insulator SiC (MISiC); Schottky barrier diode (SBD)

Indexed keywords

CHEMICAL SENSORS; COMPUTER SIMULATION; ELECTRIC INSULATORS; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMIONIC EMISSION;

CONTACT THEORY; ELECTRONIC CIRCUITRY; HYDROGEN SENSORS; METAL-INSULATOR-SIC (MISIC);

MIM DEVICES;

EID: 2942659585     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.04.002     Document Type: Conference Paper

References (17)

1. Lundstrom I., Shivaraman M.S., Svensson C., et al. Hydrogen sensitive MOS field-effect transistor. App. Phys. Lett. 26(2):1975;55-77.
2. Shivaraman M.S., Lundstrom I., Svensson C. Hydrogen sensitivity of palladium-thin-oxide-silicon Schottky barriers. Electron. Lett. 12(18):1976;483-484.
3. Lundstrom I., Shivaraman M.S., Svensson C. Chemical-reactions on palladium surfaces studied with Pd-MOS structures. Surf. Sci. 64(2):1977;497-519.
4. 2 sensors. J. Appl. Phys. 62(3):1987;1084-1092.
5. Kobayashi H., Kogetsu Y., Nakato Y. Mechanism of hydrogen sensing by platinum/insulator/silicon MIS tunneling diodes. Surf. Sci. 306(1-2):1994;69-80.
6. Xu J.P., Lai P.T., Zhong D.G., Chan C.L. Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator. IEEE Electron Device Lett. 24(1):2003;13-15.
7. Spetz A.L., Tobias P., Baranzahi A., et al. Current status of silicon carbide based high-temperature gas sensors. IEEE Trans. Electron Device. 46(3):1999;561-566.
8. Kim C.K., Lee J.H., Lee Y.H., et al. A study on a platinum-silicon carbide Schottky diodes as a hydrogen gas sensor. Sens. Actuators B. 66(1-3):2000;116-118.
9. Spetz A.L., Tobias P., Unéus L., et al. High temperature catalytic metal field-effect transistors for industrial application. Sens. Actuators B. 70(1-3):2000;67-76.
10. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;Wiley, New York.
11. Singh A., Reinhardt C.C., Anderson W.A. Temperature dependency of the electrical characteristics of Yb/p-InP tunnel metal-insulator/semiconductor junctions. J. Appl. Phys. 68:1990;3475-3483.
12. Moscatelli F., Scorzoni A., Poggi A., Cardinali G.C., Nipoti R. Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC. Semicond. Sci. Technol. 18:2003;554-559.
13. Reinhardt K.C., Singh A., Anderson W.A. Yb metal-insulator-semiconductor contacts to Indium phosphide. Solid State Electron. 31(10):1988;1537-1539.
14. Chen H.I., Chou Y.I. A comparative study of hydrogen sensing performances between electroless plated and thermal evaporated Pd/InP Schottky diodes. Semicond. Sci. Technol. 18:2003;104-110.
15. Card H.C., Rhoderick E.H. Studies of tunnel MOS diodes Part 1. Interface excess in silicon Schottky diodes. J. Phys. D Appl. Phys. 4:1971;1589-1601.
16. Fang Y.K., Hwang S.B., Lin C.Y., Lee C.C. Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor. Appl. Phys. Lett. 57:1990;2686-2688.
17. Danielsson E, Harris CI, Zetterling C-M, et al. Thermal stability of sputtered TiN as metal gate on 4H-SiC. In: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, Trans. Tech. 1997;2:805-8.