Redistribution of indium implanted in silicon due to thermal treatment and swift heavy ion irradiation

Vacuum

Volumn 75, Issue 2, 2004, Pages 149-154

  Komarov, F F ^a   Vlasukova, L A ^a   Gaiduk, P I ^a   Mironov, A M ^a   Wesch, W ^b   Kamarou, A A ^b   Yuvchenko, V N ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

In nanocrystals; Irradiation with swift Bi ions; Polyenergetic implantation; Supersaturated solid solution Si In ; Thermal annealing

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; HEAT TREATMENT; IMPURITIES; ION IMPLANTATION; IRRADIATION; NANOSTRUCTURED MATERIALS; PYROLYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SUPERSATURATION; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

IRRADIATION WITH SWIFT BI IONS; POLYGENERIC IMPLANTATION; SUPERSATURATED SOLID SOLUTIONS SI; THERMAL ANNEALING;

SILICON;

EID: 2942655345     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.079     Document Type: Article

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