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Volumn 63, Issue 4, 2001, Pages 577-579

Formation of device isolation in GaAs with polyenergetic ion implantation

(5) Komarov, F F a Kamyshan, A S a Mironov, A M a Lagutin, A E a Martynov, I S a

a BELARUSIAN STATE UNIVERSITY (Belarus)

Author keywords

Epitaxial layer; GaAs; Interdevice isolation; Polyenergetic ion implantation

Indexed keywords

COMPUTER PROGRAMMING; COMPUTER SIMULATION; DOSIMETRY; ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; ION IMPLANTATION; LEAKAGE CURRENTS;

DEVICE ISOLATION; POLYENERGETIC ION IMPLANTATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035899419 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(01)00242-1 Document Type: Article

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.