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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 187-192

Properties of InAs nanocrystals in silicon formed by sequential ion implantation

(4) Tchebotareva, A L a Brebner, J L a Roorda, S a White, C W b

a UNIVERSITÉ DE MONTRÉAL (Canada)

b OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

InAs nanocrystals; Photoluminescence; Sequential ion implantation; XRD

Indexed keywords

ABSORPTION SPECTROSCOPY; AGGLOMERATION; ANNEALING; CRYSTAL ORIENTATION; ENERGY GAP; ION IMPLANTATION; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SOLUBILITY; X RAY CRYSTALLOGRAPHY;

DEPTH PROFILING; INDIUM ARSENIDE; SEQUENTIAL ION IMPLANTATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035302947 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00660-1 Document Type: Conference Paper

Times cited : (22)

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