Non-polymeric OLEDs with a doped amorphous hole transport layer and operating voltages down to 3.2 V to achieve 100 cd/m2

Synthetic Metals

Volumn 127, Issue 1-3, 2002, Pages 169-173

  Blochwitz, J ^a   Pfeiffer, M ^a   Hofmann, M ^a   Leo, K ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Low voltage; OLEDs; p Doped hole injection layer

Indexed keywords

ELECTRIC POTENTIAL; EVAPORATION; HOLE MOBILITY; LIGHT EMISSION; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

ORGANIC LIGHT EMITTING DIODES (OLED);

LIGHT EMITTING DIODES;

EID: 0037177138     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(01)00616-6     Document Type: Conference Paper

References (18)