Structure and photoluminescence of annealed semi-insulating polycrystalline silicon material obtained by disilane

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 98-101

  Garrido, B ^a   Moreno, J A ^a   Lopez M ^a   Vila A ^a   Samitier, J ^a   Morante, J R ^a   Scheid, E ^b  

^a UNIVERSITY OF BARCELONA   (Spain)

^b LAAS CNRS   (France)

Author keywords

Annealing; Disilane; Photoluminescence

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRIC INSULATING MATERIALS; NITROGEN OXIDES; OXYGEN; PHASE SEPARATION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SILANES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DISILANE; SEMIINSULATING POLYCRYSTALLINE SILICON (SIPOS);

SEMICONDUCTING SILICON;

EID: 0031101553     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09374-1     Document Type: Article

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