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Volumn 5, Issue 10, 1996, Pages 1204-1209

State of the silicon - DLC layer interface produced by plasma methods

Author keywords

CVD plasma methods; DLC Si interface

Indexed keywords


EID: 0344319453     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(96)00531-6     Document Type: Article
Times cited : (4)

References (20)
  • 3
    • 0542447603 scopus 로고
    • Diffusion and preparation of carbon in silicon
    • J.B. Schroeder (ed.), Interscience, New York
    • R.C. Nawman and J. Wakefield, Diffusion and preparation of carbon in silicon, in J.B. Schroeder (ed.), Metallurgy of Semiconductor Materials, Interscience, New York, 1962, p. 201.
    • (1962) Metallurgy of Semiconductor Materials , pp. 201
    • Nawman, R.C.1    Wakefield, J.2
  • 12
    • 0004703077 scopus 로고
    • Z. Zhao et al., J. Appl. Phys., 73 (4) (1993) 1832.
    • (1993) J. Appl. Phys. , vol.73 , Issue.4 , pp. 1832
    • Zhao, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.