Heterojunctions of amorphous wide band gap nitrides and silicon

Diamond and Related Materials

Volumn 7, Issue 2-5, 1998, Pages 397-401

  Werbowy, A ^a   Szmidt, J ^a   Sokolowska A ^a   Olszyna, A ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Band structure; Doping n type; Doping p type; Nitride

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); NITRIDES; SILICON;

WIDE BAND GAP;

HETEROJUNCTIONS;

EID: 0031994120     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00227-6     Document Type: Article

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