Formation of microcrystalline silicon at low temperatures and role of hydrogen

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 287-290

  Kocka J ^a   Mates, T ^a   Fojtik P ^a   Ledinsky M ^a   Luterova K ^a   Stuchlikova H ^a   Stuchlik J ^a   Pelant, I ^a   Fejfar, A ^a   Ito, M ^b   Ro, K ^b   Uyama, H ^b  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b TOPPAN PRINTING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HYDROGEN; OPTOELECTRONIC DEVICES; SILICON; SURFACE ROUGHNESS;

AMBIPOLAR DIFFUSION; DARK CONDUCTIVITY; MICROCRYSTALLINE SILICON; SUBSTRATE TEMPERATURES;

CRYSTALLINE MATERIALS;

EID: 2942565996     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.086     Document Type: Conference Paper

References (9)

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