Spectroscopic ellipsometry chraracterization of the interfacial roughness in simox wafers

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 63-66

  Li, W J ^a   Song, Z R ^a   Tao, K ^a   Cheng, X H ^a   Yang, W W ^a   Yu, Y H ^a,b   Wang, X ^a,b   Zou, S C ^a   Shen, D S ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b Shanghai Simgui Technology Co Ltd   (China)

^c UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Atomic force microscopy (AFM); Effective medium approximation (EMA); Separation by implantation of oxygen (SIMOX); Spectroscopic ellipsometry

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ELLIPSOMETRY; NONDESTRUCTIVE EXAMINATION; SILICON ON INSULATOR TECHNOLOGY; SPECTROSCOPIC ANALYSIS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EFFECTIVE MEDIUM APPROXIMATION (EMA); SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX); SPECTROSCOPIC ELLIPSOMETRY;

MICROELECTRONICS;

EID: 2942564256     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.141     Document Type: Conference Paper

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