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Materials Research Bulletin

Volumn 39, Issue 9, 2004, Pages 1215-1221

Electrical properties of Sm-doped bismuth titanate thin films prepared on Si (100) by metalorganic decomposition

(4) Liu, W L a,b Xia, H R a Han, H a Wang, X Q a

a SHANDONG UNIVERSITY (China)

b QILU UNIVERSITY OF TECHNOLOGY (China)

Author keywords

A. Thin films; B. Chemical synthesis; C. X ray diffraction; D. Electrical properties; D. Ferroelectricity

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; FERROELECTRICITY; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; SURFACE STRUCTURE; SURFACE TENSION; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION;

BISMUTH TITANATE; CARRIER INJECTION; ELECTRICAL PROPERTIES; PEROVSKITE STRUCTURE;

THIN FILMS;

EID: 2942559246 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/j.materresbull.2004.04.013 Document Type: Article

Times cited : (7)

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