Field-assisted photoemission from InP/InGaAsP photocathode with p/n junction

Applied Physics Letters

Volumn 71, Issue 17, 1997, Pages 2493-2495

  Niigaki, M ^a   Hirohata, T ^a   Suzuki, T ^a   Kan, H ^a   Hiruma, T ^a  

^a CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; HETEROJUNCTIONS; PHOTOEMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON AFFINITY; FIELD ASSISTED PHOTOCATHODE; INDIUM GALLIUM ARSENIC PHOSPHIDE; PHOTOELECTRONS;

PHOTOCATHODES;

EID: 0031588276     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120098     Document Type: Article

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