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Volumn 47, Issue SUPPL. 3, 2005, Pages

New post-annealing method for unpassivated AlGaN/GaN high electron mobility transistors employing XeCl excimer laser pulses

Author keywords

AlGaN; Annealing; Excimer laser; GaN

Indexed keywords


EID: 29344447360     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.