Speed optimized diode-triggered SCR (DTSCR) for RF BSD protection of ultra-sensitive IC nodes in advanced technologies

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 3, 2005, Pages 532-541

  Mergens, Markus P J ^b,c   Russ, Christian C ^c,d,e   Verhaege, Koen G ^b,f   Armer, John ^d   Jozwiak, Phillip C ^d   Mohn, Russell P ^a,d   Keppens, Bart ^b,f   Trinh, Cong Son ^d  

^a IEEE

^b Sarnoff Europe   (Belgium)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d SARNOFF CORPORATION   (United States)

^e ESD Association   (United States)

^f Sarnoff Europe BVBA ^*  (Belgium)

Author keywords

BiCMOS; CMOS; Electrostatic discharge (ESD); Gate oxide protection; Radio frequency (RF); SiGe heterojunction bipolar transistor (HBT); Silicon controlled rectifier (SCR); Trigger speed

Indexed keywords

BICMOS; CMOS; ELECTROSTATIC DISCHARGE (ESD); GATE-OXIDE PROTECTION; RADIO FREQUENCY (RF); SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); SILICON-CONTROLLED RECTIFIER (SCR); TRIGGER SPEED;

ELECTRIC POTENTIAL; ELECTRICAL ENGINEERING; ELECTROSTATIC DEVICES; INTEGRATED CIRCUITS; SEMICONDUCTOR DIODES; TRANSISTORS;

THYRISTORS;

EID: 29344445009     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.853510     Document Type: Article

References (11)

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