Novel voltage-controlled conditioning circuit applied to the ISFETs temporary drift and thermal dependency

Sensors and Actuators, B: Chemical

Volumn 91, Issue 1-3, 2003, Pages 11-16

  Casans, S ^a   Navarro, A E ^a   Ramirez D ^a   Castro, E ^b   Baldi, A ^c   Abramova, N ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b UNIVERSIDAD DE ORIENTE   (Cuba)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

ISFET; MEMFET; Novel conditioning circuit; Temporary drifts; Thermal dependency

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FEEDBACK; ION SELECTIVE MEMBRANES; ION SENSITIVE FIELD EFFECT TRANSISTORS; THERMAL EFFECTS; VOLTAGE CONTROL;

CONDITIONING CIRCUITS; SENSOR FEEDBACK;

POTENTIOMETRIC SENSORS;

EID: 12444307075     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(03)00059-5     Document Type: Article

References (7)

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2. ISFET-based measuring device and method for correcting drift, Patent 4,701,253 (1987), to Ligtenberg et al.
3. Casans S., Navarro A.E., Ramírez D.et al. Novel constant current driver for ISFET/MEMFETs characterization. Sens. Actuators B: Chem. 76:2001;629-633.
4. N. Tadic, D. Gobovic, A Voltage Controlled Resistor in CMOS Technology Using Bisection of the Voltage Range, IEEE, 2000.
5. Low Level Measurements, fifth ed., Keithley Instruments Inc., Cleveland, OH, 1998.
6. S. Casans, Desarrollo de una instrumentación electrónica para la caracterización de sensores electroquímicos basados en ISFETs/MEMFETs: aplicación a la determinación de aniones en agua, Ph.D. Thesis, Universidad de Valencia, Spain, 2002.
7. S. Casans, A.E. Navarro, D. Ramírez et al., Instrumentation system to improve ISFET behaviour, in: Proceedings of the Instrumentation and Measurement Technology Conference, IMTC02, Anchorage, Alaska, 2002.