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Volumn 99, Issue 1, 2004, Pages 42-49

ISFET drawbacks minimization using a novel electronic compensation

Author keywords

Compensation methods; Electronic conditioning; Hysteresis; Instrumentation systems; ISFET; Long term drift

Indexed keywords

ALGORITHMS; COMPUTER SOFTWARE; DATA ACQUISITION; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HYSTERESIS; ION SELECTIVE MEMBRANES; SENSORS;

EID: 2342501851     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2003.09.015     Document Type: Article
Times cited : (30)

References (13)
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  • 2
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    • Chiang J., Jan Sh., Chou J., Chen Y. Study on the temperature effect, hysteresis and drift of pH-ISFET devices based on amorphous tungsten oxide. Sens. Actuators B. 3819:2001;1-5.
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    • Chiang, J.1    Jan, Sh.2    Chou, J.3    Chen, Y.4
  • 4
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    • An experimental study of instability in organic gate ISFETs
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    • ISFET glucose sensor system with fast recovery characteristics by employing electrolysis
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  • 9
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    • Simulation of time-dependent effects of pH-ISFETs
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    • (2000) Sens. Actuators B , vol.66 , pp. 181-183
    • Chou, J.C.1    Hsiao, C.N.2
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    • Circuit provides constant current for ISFET/MEMFETs
    • October
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.