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Volumn 483-485, Issue , 2005, Pages 1015-1020

Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors

Author keywords

Radiation detector; Radiation spectroscopy; X ray spectroscopy

Indexed keywords

EPITAXIAL LAYERS; IONIZING RADIATION; LEAKAGE CURRENTS; RADIATION DETECTORS; RADIATION HARDENING;

EID: 29144473593     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.1015     Document Type: Conference Paper
Times cited : (8)

References (7)
  • 3
    • 0037295009 scopus 로고    scopus 로고
    • Study of Silicon Carbide for X-Ray Detection and Spectroscopy
    • G. Bertuccio, R. Casiraghi, "Study of Silicon Carbide for X-Ray Detection and Spectroscopy", IEEE Trans. on Nuclear Science, vol.50, no.1, 2003, p. 175-185.
    • (2003) IEEE Trans. on Nuclear Science , vol.50 , Issue.1 , pp. 175-185
    • Bertuccio, G.1    Casiraghi, R.2
  • 7
    • 1842764855 scopus 로고    scopus 로고
    • Electrical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers
    • Le Donne A, Binetti S, Acciarri M, Pizzini S. "Electrical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers", Diamond and Related Materials 13, 2004, pp. 414-418.
    • (2004) Diamond and Related Materials , vol.13 , pp. 414-418
    • Le Donne, A.1    Binetti, S.2    Acciarri, M.3    Pizzini, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.