Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers

Diamond and Related Materials

Volumn 13, Issue 3, 2004, Pages 414-418

  Le Donne, A ^a   Binetti, S ^a   Acciarri, M ^a   Pizzini, S ^a  

^a Materials Science Department   (Italy)

Author keywords

4H SiC; Minority carriers diffusion length; Radiation induced defects; Schottky diode

Indexed keywords

DEPOSITION; ELECTRON IRRADIATION; EPITAXIAL GROWTH; GOLD; PHOTOCURRENTS; RADIATION DAMAGE; X RAYS;

ELECTRICAL CHARACTERIZATION; EPITAXIAL LAYERS; X RAY DETECTORS;

SILICON CARBIDE;

DIAMOND;

EID: 1842764855     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.11.079     Document Type: Article

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