Ion beam analysis of PECVD silicon oxide thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 243, Issue 1, 2006, Pages 200-204

  Fernandez Lima, F ^a   Rodriguez, J A ^b   Pedrero, E ^b   Fonseca Filho, H D ^c   Llovera, A ^d   Riera, M ^d   Dominguez, C ^d   Behar, M ^e   Zawislak, F C ^e  

^a Instituto Superior de Tecnologias y Ciencias Aplicadas InSTEC   (Cuba)

^b UNIVERSITY OF HAVANA   (Cuba)

^c PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^d INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^e FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

AFM; Ion beam analysis; RBS; Silicon oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BEAMS; NITROGEN OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SURFACE ROUGHNESS;

ION BEAM ANALYSIS; RBS;

THIN FILMS;

EID: 29144470309     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.07.244     Document Type: Article

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