RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(0 0 1) substrate using Ge-buffer layer

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 478-481

  Minami, K ^a   Jogo, J ^a   Morishita, Y ^a   Ishibashi, T ^a   Sato, K ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Phosphides; B2. Magnetic materials

Indexed keywords

CRYSTAL GROWTH; GERMANIUM; MAGNETIC MATERIALS; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

BUFFER LAYERS; CHALCOPYRITE; PHOSPHIDES; TERNARY MATERIALS;

GALLIUM COMPOUNDS;

EID: 18444386226     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.085     Document Type: Conference Paper

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