Local strain and potential distribution induced by single dislocations in GaN

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Gmeinwieser, N ^a   Gottfriedsen, P ^a   Schwarz, U T ^a   Wegscheider, W ^a   Clos, R ^b   Krtschil, A ^b   Krost, A ^b   Weimar, A ^c   Bruderl G ^c   Lell, A ^c   Harle V ^c  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORE CHARGE; DIPOLE-LIKE BEHAVIOR; LOCAL STRAIN; POTENTIAL DISTRIBUTION;

DEFORMATION; EDGE DETECTION; ELECTRIC POTENTIAL; GALLIUM NITRIDE; PHOTOLUMINESCENCE; STRAIN MEASUREMENT; SUBSTRATES;

DISLOCATIONS (CRYSTALS);

EID: 29144432761     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2137879     Document Type: Article

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