Vanadium-doped indium tin oxide as hole-injection layer in organic light-emitting devices

Applied Physics Letters

Volumn 87, Issue 24, 2005, Pages 1-3

  Chen, T H ^a,b   Liou, Y ^c   Wu, T J ^a   Chen, J Y ^a  

^a Ulvac Taiwan Inc   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; LIGHT EMITTING DIODES; VANADIUM;

ENERGY BARRIER; HOLE INJECTION LAYER;

INDIUM COMPOUNDS;

EID: 28844474480     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2137892     Document Type: Article

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