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Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 2092-2094

Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

(4) Chen, T H a Liou, Y a Wu, T J b Chen, J Y b

a INSTITUTE OF PHYSICS (Taiwan)

b Ulvac Taiwan Inc (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; ENCAPSULATION; EVAPORATION; HAFNIUM; INDIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPUTTERING;

LUMINANCE; ORGANIC LIGHT-EMITTING DIODES (OLED); POWER EFFICIENCY; WORK FUNCTION (WF);

LIGHT EMITTING DIODES;

EID: 5444256120 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1790026 Document Type: Article

Times cited : (19)

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