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Physical Review Letters

Volumn 95, Issue 15, 2005, Pages

Sign changes of intrinsic spin hall effect in semiconductors and simple metals: First-principles calculations

(2) Yao, Y a,b Fang, Z a,b

a INSTITUTE OF PHYSICS (China)

b Beijing National Laboratory for Condensed Matter Physics (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRINSIC EFFECT; GAAS; INTRINSIC SPIN HALL CONDUCTIVITY (ISHC);

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE;

HALL EFFECT;

EID: 28844462493 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.95.156601 Document Type: Article

Times cited : (183)

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