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Volumn 95, Issue 16, 2005, Pages

Quasi-ice monolayer on atomically smooth amorphous SiO2 at room temperature observed with a high-finesse optical resonator

(5) Aarts, I M P a Pipino, A C R b Hoefnagels, J P M a Kessels, W M M a Van De Sanden, M C M a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EVANESCENT-WAVE CAVITY RING-DOWN ABSORPTION SPECTROSCOPY; INTENSITY SATURATION; QUASI-ICE MONOLAYER; QUASICRYSTALLINE SURFACE OH NETWORK;

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; BAND STRUCTURE; ICE; OPTICAL RESONATORS; QUASICRYSTALS;

MONOLAYERS;

EID: 28844447070 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.95.166104 Document Type: Article

Times cited : (56)

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