Role of interfacial roughness on bias-dependent magnetoresistance and transport properties in magnetic tunnel junctions

Journal of Applied Physics

Volumn 98, Issue 10, 2005, Pages

  Huang, J C A ^b   Hsu, C Y ^b   Liao, Y F ^a   Lin, M Z ^a   Lee, C H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

TRAP STATE DENSITY (TSD); TUNNEL MAGNETORESISTANCE (TMR); X-RAY REFLECTIVITY;

IRRADIATION; MAGNETIC DEVICES; MAGNETORESISTANCE; TRANSPORT PROPERTIES; X RAY ANALYSIS;

SURFACE ROUGHNESS;

EID: 28644446021     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2132096     Document Type: Article

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