Bias-voltage dependence of magnetoresistance in magnetic tunnel junctions grown on Al2 O3 (0001) substrates

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Ahn, Sung Jin ^a   Kato, Takeharu ^a   Kubota, Hitoshi ^a   Ando, Yasuo ^a   Miyazaki, Terunobu ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC POTENTIAL; ELECTRODES; FERROMAGNETISM; INTERFACES (MATERIALS); MAGNETORESISTANCE; SUBSTRATES; THERMAL EFFECTS;

BIAS VOLTAGE; MAGNETIC TUNNELS; PLASMA OXIDATION; ROOM TEMPERATURE;

SEMICONDUCTOR JUNCTIONS;

EID: 17944364698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1870104     Document Type: Article

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