Damage induced in high energy helium-implanted 4H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 399-401

  Leclerc, S ^a   Beaufort, M F ^a   Declemy A ^a   Barbot, J F ^a  

^a UMR 6630 CNRS   (France)

Author keywords

Defects; Helium; Ion implantation; RX; SiC; TEM

Indexed keywords

AMORPHIZATION; CRYSTAL LATTICES; HELIUM; HIGH ENERGY PHYSICS; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HIGH ENERGY; LATTICE STRAIN; RX; SIC;

SILICON CARBIDE;

EID: 28644444143     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.165     Document Type: Conference Paper

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