Defect formation in 6H-SiC irradiated by 3 MeV He ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 209, Issue , 2003, Pages 179-183

  Sasase, M ^a   Ito, Y ^a   Yasuda, K ^a   Ishigami, R ^a   Hatori, S ^a   Yamamoto, A ^b  

^a WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

^b UNIVERSITY OF FUKUI   (Japan)

Author keywords

Bubbles; Defects; High energy helium; Ion implantation; SiC; W MAST

Indexed keywords

DIFFRACTION; HELIUM; ION IMPLANTATION; SILICON CARBIDE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT FORMATION;

ION BEAMS;

EID: 0042160087     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)02023-2     Document Type: Conference Paper

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