An application of cathodoluminescence to optimize the shallow trench isolation process

IEEE Transactions on Semiconductor Manufacturing

Volumn 18, Issue 4, 2005, Pages 546-552

  Mizukoshi, Toshikazu ^a,d   Shibusawa, Katsuhiko ^a,e   Yo, Shoji ^b,e   Sugie, Ryuichi ^c,f   Ajioka, Tsuneo ^c  

^a Miyagi Oki Electric Company Ltd   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c TORAY RESEARCH CENTER INC   (Japan)

^d JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^e Process Integration Engineering Department

^f Raman and Cathotoluminescence Spectroscopy in Semiconductor Devices ^*  (Japan)

Author keywords

Cathodoluminescence (CL); D lines; Dislocations; Shallow trench isolation (STI)

Indexed keywords

CATHODOLUMIMESCENCE (CL) SPECTROSCOPY; D LINES; SHALLOW TRENCH ISOLATION (STI);

DISLOCATIONS (CRYSTALS); NITRIDES; OPTIMIZATION; PROCESS CONTROL; SPECTROSCOPIC ANALYSIS; THIN FILMS;

CATHODOLUMINESCENCE;

EID: 28644433487     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.858497     Document Type: Conference Paper

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