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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 109-113

Photoluminescence behavior of silicon nanocrystals produced by hot implantation in SiO2

(5) Sias, U S a,b Amaral, L a Behar, M a Boudinov, H a Moreira, E C c

a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

b Centro Federal de Educacao Tecnologica de Pelotas (Brazil)

c CENTRO UNIVERSITÁRIO FRANCISCANO (Brazil)

Author keywords

Ion implantation; Photoluminescence; Silicon nanocrystals

Indexed keywords

ANNEALING; CRYSTALS; ION IMPLANTATION; PHOTOLUMINESCENCE; SILICON;

LINE SHAPE STRUCTURE; SILICON NANOCRYSTALS; STRIKING INTENSITY;

NANOSTRUCTURED MATERIALS;

EID: 28544434570 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2005.08.007 Document Type: Conference Paper

Times cited : (4)

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