Growth dynamics of hydrogenated silicon nanoparticles under realistic conditions of a plasma reactor

Computational Materials Science

Volumn 35, Issue 3, 2006, Pages 216-222

  Vach, H ^a   Brulin, Q ^a   Chaabane N ^a   Novikova, T ^a   Roca I Cabarrocas, P ^a   Kalache, B ^b   Hassouni, K ^b   Botti, S ^c   Reining, L ^c  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b UNIVERSITÉ PARIS 13   (France)

^c LABORATOIRE DES SOLIDES IRRADIÉS   (France)

Author keywords

Absorption spectrum; Cluster growth dynamics; Crystallization; Fluid dynamics model; Hydrogen; Nanostructures; PECVD; Plasma; Polymorphous silicon; Semiempirical molecular dynamics simulations; Silicon; Solar cells; Time dependent DFT

Indexed keywords

ABSORPTION; AMORPHOUS MATERIALS; CHEMICAL REACTORS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; CRYSTALLIZATION; FLUID DYNAMICS; HYDROGEN; HYDROGENATION; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; PROBABILITY DENSITY FUNCTION; SILANES; SOLAR CELLS;

ABSORPTION SPECTRUM; CLUSTER GROWTH DYNAMICS; FLUID DYNAMICS MODEL; POLYMORPHOUS SILICON; SEMIEMPIRICAL MOLECULAR DYNAMICS SIMULATION; TIME-DEPENDENT DFT;

SILICON;

EID: 28444466176     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.07.010     Document Type: Conference Paper

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