Luminescence properties of charged dislocations in semi-insulating GaN:Zn

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 508-511

  Srinivasan, S ^a   Cai, J ^a   Contreras, O ^a   Ponce, F A ^a   Look, D C ^b   Molnar, R J ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON HOLOGRAPHY; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NITRIDES; THICK FILMS; WIDE BAND GAP SEMICONDUCTORS;

CHARGED DISLOCATIONS; HYDRIDE VAPOR PHASE EPITAXY; INTENSITY VARIATIONS; LUMINESCENCE INTENSITY; LUMINESCENCE PROPERTIES; POTENTIAL FLUCTUATIONS; SEMI-INSULATING GAN; THREADING DISLOCATION;

ZINC COMPOUNDS;

EID: 28344452006     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390100     Document Type: Conference Paper

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