Far-infrared absorption due to electronic transitions of N-O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration

Applied Physics Letters

Volumn 87, Issue 15, 2005, Pages 1-3

  Alt, H Ch ^a   Gomeniuk, Y V ^a   Bittersberger, F ^b   Kempf, A ^b   Zemke, D ^b  

^a MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTALS; INFRARED RADIATION; OXYGEN;

ELECTRONIC TRANSITIONS; N-O COMPLEXES;

SILICON;

EID: 28344446512     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2099517     Document Type: Article

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