Properties and barrier material interactions of electroless copper used for seed enhancement

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 115-120

  Witt, C ^a,b   Pfeifer, K ^a,c  

^a SEMATECH   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; ELECTROMIGRATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTROPLATING; HYDROGEN; MORPHOLOGY; RELIABILITY; SILICA; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CONFORMAL METAL DEPOSITION METHOD; COPPER DAMASCENCE METALLIZATION; DUAL DAMASCENE PROCESS; ELECTROLESS COPPER; SEED ENHANCEMENT;

PHYSICAL VAPOR DEPOSITION;

EID: 0346308408     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e1.4     Document Type: Conference Paper

References (9)

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