A reliable course of scanning capacitance microscopy analysis applied for 2D-dopant profilings of Power MOSFET devices

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1535-1537

  Leicht, M ^a   Fritzer, G ^a   Basnar, B ^b   Golka, S ^b   Smoliner, J ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; MICROELECTRONIC PROCESSING; MICROSCOPIC EXAMINATION;

SCANNING CAPACITANCE MICROSCOPY (SCM);

MOSFET DEVICES;

EID: 0035456618     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00164-0     Document Type: Article

References (5)

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4. Stephenson R., Verhulst A. and de Wolf P. J. Vac.Sci. Technol. B 18(1) (1999) 405
5. Basnar B., Golka S., Gorni E., Harasek S., Bertagnolli E., Schatzmayer M. and Smoliner J. submitted for publication in J.Vac.Sci. Technol. (2001)