Copper alloy seed integration for reliability improvement

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 254-260

  Besling, Wim F A ^a   Federspiel, X ^a   Vanypre, T ^a   Torres, Joaquin ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

Adhesion; Atomic layer deposition; Copper resistivity; Cu alloy; Electromigration

Indexed keywords

ADHESION; CAPACITANCE; ELECTRIC RESISTANCE; ELECTROMIGRATION; SPECTROSCOPIC ANALYSIS;

ATOMIC LAYER DEPOSITION (ALD); COPPER RESISTIVITY;

COPPER ALLOYS;

EID: 28044448085     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.031     Document Type: Conference Paper

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