A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2005, Pages 14-17

  Sun, Y ^a   Borngraber J ^a   Herzel, F ^a   Winkler, W ^a  

^a IHP   (Germany)

Author keywords

60 GHz; Differential Amplifier; LNA; Microwave Monolithic Integrated Circuits (MMIC); SiGe:C Bipolar BiCMOS

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; GAIN MEASUREMENT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON; SPURIOUS SIGNAL NOISE;

60 GHZ; LOW-NOISE AMPLIFIER (LNA); SIGE:C BIPOLAR/BICMOS;

DIFFERENTIAL AMPLIFIERS;

EID: 27944497870     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. max =375 GHz / 210 GHz," in Proc. IEEE Conf. Indium Phosphide and Related Materials, May 2003, pp. 374-377.
2. B. A. Floyd et al., "SiGe Bipolar Transceiver Circuits Operating at 60 GHz," IEEE J. Solid-State Circuits, vol. 40, Jan. 2005, pp.156-167.
3. B. Heinemann et al., "Novel Collector Design for High-Speed SiGe:C HBTs," IEDM Tech. Dig., pp. 775-778, Dec. 2002.
4. W. Winkler et al., "60 GHz Transceiver Circuits in SiGe:C BiCMOS Technology," ESSCIRC, pp. 83-86, Sept. 2004.
5. W. Winkler et al., "A Fully Integrated BiCMOS PLL for 60 GHz Wireless Applications," ISSCC Dig. Tech. Papers, Feb. 2005, pp. 406-407.
6. B. Razavi, "A 60 GHz Direct-Conversion CMOS Receiver," ISSCC Dig. Tech. Papers, Feb. 2005, pp. 400-401.
7. C. P. Yue et al., "Physical Modeling of Spiral Inductors on Silicon," in IEEE Trans. on Electron Devices, vol. 47, March 2000, pp. 560-568.