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Volumn 87, Issue 22, 2005, Pages 1-3
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Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRONS;
EPITAXIAL GROWTH;
HELIUM;
HYDROGEN;
METAL DETECTORS;
RADIATION;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
THERMAL EFFECTS;
ELECTRON-HOLE PAIRS;
INCIDENT RADIATION;
PULSE HEIGHT RESPONSE;
SILICON DETECTORS;
ELECTRON TRANSITIONS;
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EID: 27944490763
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2135507 Document Type: Article |
Times cited : (26)
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References (18)
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