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Volumn 87, Issue 22, 2005, Pages 1-3

Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; EPITAXIAL GROWTH; HELIUM; HYDROGEN; METAL DETECTORS; RADIATION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMAL EFFECTS;

EID: 27944490763     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135507     Document Type: Article
Times cited : (26)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.